MOS temperature sensing circuit
US4768170A · kind A · utility
27Cited by
3References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 6, 1986 |
| Grant date | Aug 30, 1988 |
| Priority date | — |
| Expiry date | Jun 6, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K5/2481
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An MOS temperature sensing circuit formed on a silicon substrate which may be used for disabling portions of output drivers in EPROM at high temperatures. The circuit uses a first and second diode, one of which has substantially larger area than the other. The diodes are reverse biased through field-effect transistors. The leakage from the smaller diode is used to cancel the effects process variations on the leakage current of the larger diode, thereby providing a circuit with an output substantially dependent only on temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.