Single step lift-off technique for submicron gates
US4769343A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 17, 1987 |
| Grant date | Sep 6, 1988 |
| Priority date | — |
| Expiry date | Jul 17, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/951
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a submicron width metal line on a substrate is described incorporating the steps of coating a substrate with a layer of photoresist, baking the layer, exposing the layer to a pattern, soaking the layer in a solution including chlorobenzene, developing the layer to form openings, baking the photoresist to remove any residual chlorobenzene, exposing the layer to deep ultraviolet radiation, baking the layer to cause the layer to flow at the edges of the openings, depositing metal on the layer and on the substrate, and dissolving the layer to lift off the metal disposited on the layer whereby the metal deposited on the substrate remains. The invention overcomes the problem of forming submicron width metal lines from one micron openings in a photoresist layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.