Stress relief in epitaxial wafers

US4769689A · kind A · utility

Assignee

• American Telephone and Telegraph Company, AT&T Bell Laboratories · US

Inventor

• Wen-Bin Lin · Dresden, DE

Key dates

• Filing date: Jul 13, 1987
• Grant date: Sep 6, 1988
• Expiry date: Jul 13, 2007

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02381
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The specification describes an epitaxial structure designed to reduce or eliminate the bowing of semiconductor wafers due to stresses caused by lattice mismatch between a heavily boron doped substrate and a lightly doped epitaxial layer. The lattice mismatch is reduced or eliminated by doping germanium into the substrate prior to epitaxial growth.