Metallizing paste for silicon carbide sintered body and a semiconductor device including the same
US4769690A · kind A · utility
9Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 24, 1986 |
| Grant date | Sep 6, 1988 |
| Priority date | — |
| Expiry date | Apr 24, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K1/092
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The metal powder composition for the metallizing paste is composed of not less than 90 wt % gold, 0.03-3.0 wt % cadmium, 0.1-2.0 wt % bismuth, 0.01-1.0 wt % copper, 0.01-2.0 wt % germanium and 0.01-1.0 wt % silicon. The metallized paste bonds both the silicon carbide sintered substrate and the silicon semiconductor element with a high bonding strength.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.