Method for tuning a microwave integrated circuit
US4769883A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 7, 1983 |
| Grant date | Sep 13, 1988 |
| Priority date | — |
| Expiry date | Mar 7, 2003 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49156
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of tuning a microwave integrated circuit by trimming desired film-type circuit patterns included therein by a cold-pressure bonding technique is disclosed. More specifically, intercoupled circuit patterns are formed on a semi-insulating substrate with some circuit patterns having impedance characteristics of a desired nominal value. Each circuit pattern may comprise a plurality of conductive paths of malleable metal. Gaps are provided at appropriately chosen places in the conductive paths of predetermined circuit patterns. Selected ones of the gaps of the conductive paths are bridged to adjust the impedance characteristics of the associated predetermined circuit pattern by wiping with a probe the malleable metal of the conductive path at one end of the gap, across the gap to make contact with the malleable metal of the conductive path at the other end of the gap. The method further includes steps for in-situ testing of the integrated circuit by energizing the microwave integrated circuit to effect operation thereof; testing selected parameters of the energized microwave integrated circuit for determining the operational response thereof; and performing the step of bridging…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.