Protection film structure for functional devices
US4770923A · kind A · utility
12Cited by
3References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 20, 1985 |
| Grant date | Sep 13, 1988 |
| Priority date | — |
| Expiry date | Nov 20, 2005 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31605
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An inorganic protection film (12) such as of silicon nitride for protecting humidity-sensitive functional devices (16) on the substrate from water molecules (15) is formed on an organic substrate (11) such as one made of polycarbonate plastic material, with a soft buffer interface film (13) between the substrate and the protection film, and the buffer film releases stress due to the difference of thermal expansion coefficients of the organic substrate and the protection film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.