Method of making symmetrically controlled implanted regions using rotational angle of the substrate
US4771012A · kind A · utility
51Cited by
12References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 12, 1987 |
| Grant date | Sep 13, 1988 |
| Priority date | — |
| Expiry date | Jun 12, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/371
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a field effect transistor, wherein impurity diffusion layers of source and drain are formed by an ion implantation method using the gate electrode as the mask by inclining the semiconductor substrate with respect to the ion beam incident direction so as to prevent the channeling effect and also rotating it in planarity with respect to the ion beam scanning plane. As a result, impurity diffusion layers can be formed symmetrically with respect to the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.