Patterning process
US4771017A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 23, 1987 |
| Grant date | Sep 13, 1988 |
| Priority date | — |
| Expiry date | Jun 23, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/143
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An improved patterning process, useful for the metallization of highly efficient photovoltaic cells, the formation of X-ray lithography masks in the sub half-micron range, and in the fabrication of VLSI and MMIC devices, is disclosed. The improved patterning process includes the steps of providing a substrate with a photoactive layer, patterning the photoactive layer with an inclined profile, depositing on both the substrate and the patterned photoactive layer a layer of disjointed metal such that the thickness of the metal layer exceeds that of the patterned photoactive layer and that the metal layer deposited on the substrate is formed with walls normal to the surface of the substrate. Preferably, the deposition of the disjointed metal layer is effected by evaporative metallization in a direction normal to the surface of the substrate. The deposited metal layer on the substrate is characterized by a high aspect ratio, with a rectangular cross section.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.