Method of manufacturing solid-state image sensor
US4772565A · kind A · utility
5Cited by
4References
10Claims
0Family size
Assignee
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Key dates
| Filing date | May 20, 1987 |
| Grant date | Sep 20, 1988 |
| Priority date | — |
| Expiry date | May 20, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a solid-state image sensor comprises the steps of preparing a solid-state image sensor substrate in which a signal charge storing diode and a signal charge readout section are formed and forming, as a photoelectric conversion section, a photoconductive film having an amorphous silicon film on the substrate. The amorphous silicon film is formed by introducing a source gas containing silicon compounds on the substrate and decomposing the source gas by radiating ultraviolet light on the source gas while the solid-state image sensor substrate is kept at a temperature of 100.degree. to 350.degree. C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.