Complementary metal oxide semiconductor integrated circuit with unequal reference voltages
US4772930A · kind A · utility
4Cited by
9References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 4, 1987 |
| Grant date | Sep 20, 1988 |
| Priority date | — |
| Expiry date | May 4, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A power supply voltage to be applied to a metallic connection 36a is supplied through an n.sup.+ diffusion region 34a, an N type well 22, an n.sup.+ diffusion region 34c and a metallic connection 36C to a p.sup.+ diffusion region 23b serving as a power supply line. An n.sup.+ diffusion region 73 serving as a ground line is grounded through a metallic connection 76c, a p.sup.+ diffusion region 74c, a P type well 72, a p.sup.+ diffusion region 74b and a metallic connection 76b.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.