Delta-doped ohmic metal to semiconductor contacts
US4772934A · kind A · utility
27Cited by
3References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 6, 1986 |
| Grant date | Sep 20, 1988 |
| Priority date | — |
| Expiry date | Jun 6, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/0421
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A non-alloyed ohmic contact in gallium arsenide is described wherein a plurality of delta-doped monolayers are placed at a predetermined distance from each other and from the metal to semiconductor interface of the contact. The predetermined distance is chosen to keep the tunneling barrier extremely thin. In the embodiment shown, silicon is used as a dopant in the gallium arsenide material but other elements from groups II, IV and VI of the periodic table of elements may be used in other III-V semiconductor substrates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.