Thick film capacitor
US4772985A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 18, 1987 |
| Grant date | Sep 20, 1988 |
| Priority date | — |
| Expiry date | Sep 18, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/435
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Disclosed is a thick film capacitor comprising (a) a sintered layer of a ferroelectric material mainly consisting of one or more ferroelectric inorganic compounds having a perovskite structure and an inorganic binder having a eutectic composition which experiences a liquid phase at a temperature lower than the sintering temperature of the ferroelectric inorganic compounds, and (b) at least two electrodes formed on both surfaces of the sintered layer of the ferroelectric material. In the thick film capacitor of this invention, the perovskite structure of the ferroelectric inorganic compounds is not destroyed upon sintering. Therefore, a high degree of sintering, a good dielectric characteristic and high moisture and migration resistances can be obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.