Solar cell with low infra-red absorption and method of manufacture
US4773945A · kind A · utility
22Cited by
3References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 14, 1987 |
| Grant date | Sep 27, 1988 |
| Priority date | — |
| Expiry date | Sep 14, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/544
Abstract
A cell for using solar radiation to generate electrical power comprises a direct band gap (or high absorption coefficient) substrate which is formed with at least one hole that extends from one side of the substrate to the other side of the substrate. A p-n junction formed with an emitter and a base is joined to one side of the substrate with the hole allowing means to make electrical contact with the base. A metallic layer is extended through the hole into electrical contact with the base to establish a low resistance path between the base of the p-n junction and the back side of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.