Process for the production of polycrystalline silicon coatings by electrolytic deposition of silicon
US4773973A · kind A · utility
2Cited by
1References
11Claims
0Family size
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Key dates
| Filing date | Mar 8, 1988 |
| Grant date | Sep 27, 1988 |
| Priority date | — |
| Expiry date | Mar 8, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S205/915
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A novel process for the electrolytic deposition of silicon from a melt containing covalent silicon compounds, in particular silicon tetrahalides, and furthermore aluminium halides, alkali metal halides and halides of transition metals is carried out at relatively low temperatures of 100.degree. to 350.degree. C. in an inert atmosphere. The silicon is deposited cathodically or anodically onto electrically conductive material. The silicon coatings are homogeneous and adhere firmly to the substrate. The coated materials can be used for the production of photoconductive or photovoltaic devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.