Semiconductor device for detecting electromagnetic radiation or particles
US4775881A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 13, 1987 |
| Grant date | Oct 4, 1988 |
| Priority date | — |
| Expiry date | Feb 13, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/1468
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A semiconductor device of the doping superlattice type for detecting electromagnetic radiation or particles comprises a semi-insulating substrate (10), a first layer (11) of either n-type or p-type conductivity deposited thereon, a plurality of layers (12, 13, 14) of alternating conductivity types deposited in series on said first layer (11), a strongly p-type electrode region which extends through said p-type and n-type layers (11, 12, 13, 14) and defines a first selective electrode (15), and a strongly n-type electrode region which also extends through said p-type and n-type layers (11, 12, 13, 14), and which is spaced apart from said strongly p-type region and defines a second selective electrode. The device is a homogeneous semiconductor in which the n-type and p-type layers other than the first layer (11) and the outermost layer (14)have substantially identical thicknesses and doping concentrations. The first layer (11) and the outermost layer (14) are of the same conductivity type and have a thickness substantially equal to one half of the thickness of each of the other layers (12, 13). Furthermore, the first layer and the outermost layer have a doping concentration substanti…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.