Lateral bipolar transistor

US4775882A · kind A · utility

Assignee

• Rockwell International Corporation · US

Inventors

• David L. Miller · Seattle, US
• Peter M. Asbeck · San Diego, US

Key dates

• Filing date: Nov 19, 1986
• Grant date: Oct 4, 1988
• Expiry date: Nov 19, 2006

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/854

Abstract

Silicon doping of GaAs provides n conductivity in {100} planes and p conductivity in {111} A planes. A split level of Si-doped GaAs utilizes this phenomena to provide a bipolar transistor. In one embodiment, the emitter is one level of the layer in the {100} planes, and the collector is another level of the layer in the {100} planes. These n conductivity levels are joined by {111} A planes to form a p conductivity base. The junctions in the layer between the {100} planes and the {111} A planes form an npn transistor.