Method for making a composite substrate for electronic semiconductor parts
US4777060A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 17, 1986 |
| Grant date | Oct 11, 1988 |
| Priority date | — |
| Expiry date | Sep 17, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/16225
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided for making a composite substrate for electronic semiconductor parts. The composite substrate has a metal core, an insulating layer, and a conducting layer. The insulating layer is deposited by chemical vapor deposition in the gaseous phase on the metal core, or by chemical vapor deposition in combination with other techniques, such as plasmaspraying and/or melting. The metal core is comprised of a highly heat-resistant refractory metal, e.g., molybdenum, tungsten, titanium, molybdenum-manganese alloy, or a high-alloy steel having a permeability of about 1.002. The insulating layer is comprised of an inorganic material such as aluminum oxide or aluminum nitride. The conducting layer typically comprises copper.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.