Semiconductor etching process which produces oriented sloped walls
US4778583A · kind A · utility
13Cited by
10References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 11, 1987 |
| Grant date | Oct 18, 1988 |
| Priority date | — |
| Expiry date | May 11, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3065
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is disclosed of forming a semiconductor device including performing a dry plasma etch at one major surface of a monocrystalline silicon substrate to form a sloped lateral wall lying in a selected crystallographic plane intersecting one major surface. The oriented sloped lateral wall is formed during plasma etching by introducing into contact with said major surface at unprotected locations a chlorofluorocarbon gas and employing during etching a pressure of at least 6.67 Pa and a radio frequency power density of less than 3 watts per square centimeter.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.