Capacitor tantalum surface for use as a counterelectrode device and method
US4780797A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 16, 1987 |
| Grant date | Oct 25, 1988 |
| Priority date | — |
| Expiry date | Dec 16, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01G9/0425
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A counterelectrode and a method for providing the counterelectrode wherein an inherently high effective capacitance surface is formed on tantalum. The oxide forming ability of the tantalum surface is destroyed by removing existing oxide from the surface, depositing on the surface a non-continuous layer of a platinum family metal, and alloying the deposited metal with the tantalum thereby forming alloy layer. A second layer of metal, also selected from the platinum family, may then be deposited over the alloy layer. Alternately the platinum family metal may be sputtered onto the surface of the tantalum with or without an the alloying step. The second deposition produces a spongy layer and is accomplished by conventional electrolytic techniques.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.