Process for the photochemical vapor deposition of siloxane polymers
US4781942A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 19, 1985 |
| Grant date | Nov 1, 1988 |
| Priority date | — |
| Expiry date | Dec 19, 2005 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31663
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for forming on the surface of a substrate a layer of a siloxane polymer by exposing the substrate to a first vapor phase monomer precursor having the formula SiR.sub.x H.sub.4-x where x is 1 to 4 and R is alkyl or phenyl, and a second vapor phase oxygen-containing precursor in the presence of radiation of a predetermined wavelength to bring about the reaction to form the siloxane polymer which deposits on the surface of substrate. The monomer precursor may comprise a mixture, such as SiRH.sub.3 and SiR.sub.2 H.sub.2 with each other or with SiR.sub.3 H. By varying the composition of such mixtures, the composition of the siloxane polymer may be chosen to provide predetermined properties, and, further, may be varied throughout the thickness of the deposited layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.