Process for producing a predetermined doping in side walls and bases of trenches etched into semiconductor substrates

US4782036A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Frank Becker · Munich, DE
• Erwin Hopf · Unterhaching, DE

Key dates

• Filing date: Jul 16, 1987
• Grant date: Nov 1, 1988
• Expiry date: Jul 16, 2007

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/2255
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A process for producing a predetermined doping level in side walls and bases of trenches which have been etched into semiconductor substrates which involves treating the substrate with a gaseous atmosphere containing organic compounds of silicon, oxygen and boron in amounts sufficient to form a boron silicate glass, thermally decomposing the organic compounds to form the boron silicate glass as a layer deposit along the side walls and the bases and thereafter diffusing the layer deposit into the side walls and the base. This is followed by removing the layer deposit remaining after the predetermined amount of diffusion has taken place.