Power semiconductor device with main current section and emulation current section
US4783690A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 31, 1986 |
| Grant date | Nov 8, 1988 |
| Priority date | — |
| Expiry date | Jul 31, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/665
Abstract
A power semiconductor device incorporates in its active, or current-carrying, region a main current section and an emulation current section. The active region is surrounded by a common device termination region. This is accomplished through provision of respective separate cathodes for the main and emulation current regions, while the device anode is common to both the main and emulation current sections. The current level in the emulation current section provides an accurate representation of the current level in the main current section since the main and emulation current sections are closely coupled both thermally and electrically and, further, are formed in the same fabrication process. The current level in the main current section can be economically determined with low power circuitry by way of sensing the current level in the emulation current section.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.