Leadless chip carrier for RF power transistors or the like
US4783697A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 2, 1986 |
| Grant date | Nov 8, 1988 |
| Priority date | — |
| Expiry date | Sep 2, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K3/3431
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A leadless chip carrier for RF power transistors or the like is disclosed which includes a body of insulating material having two major surfaces and side walls joining the major surfaces. In a first embodiment, a pattern of conductive pads is deposited on one major surface. A pattern of conductive contact areas is deposited on the other major surface and distributed interconnecting portions of conductive material are deposited to connect the pads to the respective contact areas. In a second embodiment, larger pads and contact areas are provided on a beryllia substrate to provide a leadless chip carrier for RF transistors capable of handling 8 watts. In a third embodiment, a single slot is made conductive to provide the distributed interconnecting portion for one terminal, while in a fourth embodiment, the slot is changed to a plurality of small, tungsten-filled through holes to provide a virtually hermetically sealed leadless chip carrier for RF power transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.