Static RAM with divided word-line structure
US4783767A · kind A · utility
5Cited by
2References
7Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 9, 1986 |
| Grant date | Nov 8, 1988 |
| Priority date | — |
| Expiry date | Jun 9, 2006 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C8/14
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
This invention relates to a static random access memory having the so-called divided word-line structure, uses the power supply line also as the common word line so as to enable operation at high speed without causing complication in structure of the wiring layer, resulting in that the manufacturing yield can be improved and a manufacturing coat lowers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.