Post-oxidation anneal of silicon dioxide
US4784975A · kind A · utility
50Cited by
6References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 23, 1986 |
| Grant date | Nov 15, 1988 |
| Priority date | — |
| Expiry date | Oct 23, 2006 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/91
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The insulating and stabiity characteristics of silicon dioxide gate oxide insulator for field effect transistors are enhanced by subjecting the silicon dioxide to an annealing in an ambient that contains a gaseous oxygen-containing species in an amount sufficient to provide a partial pressure from the oxygen-containing material of about 10.sup.-6 torr to about 10 torr during annealing temperatures of about 500.degree. C. to about 1200.degree. C. Such is carried out for a time sufficient to enhance the insulating and stability characteristics of the silicon dioxide insulator.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.