FET oscillator circuit
US4785263A · kind A · utility
5Cited by
7References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 28, 1987 |
| Grant date | Nov 15, 1988 |
| Priority date | — |
| Expiry date | May 28, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03B2200/0032
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A Ga As FET oscillator includes an FET having gate-drain and source connections. A tuned circuit is connected to the FET gate. Bias voltage is supplied to the FET. A parallel-connected resistor and capacitor is connected to the FET source. A Schottky diode is connected across the FET gate-source junction and the parallel connected resistor and capacitor, with its anode connected to the FET gate and its cathode connected to the resistor and capacitor. The Schottky diode limits the positive voltage across the gate-source junction of the Ga As FET to prevent gate-source current flow.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.