Heterostructure semiconductor laser
US4785457A · kind A · utility
14Cited by
3References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 11, 1987 |
| Grant date | Nov 15, 1988 |
| Priority date | — |
| Expiry date | May 11, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3081
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The crystallographic plane-dependent, amphoteric nature of Si-doped AlGaAs is used to provide a low threshold semiconductor laser. An active layer of AlGaAs is sandwiched between an injection layer and a current confining layer of AlGaAs. The injection layer is doped to be n-type conductivity. The confining layer is amphoterically doped with Si to be n-type in a (100) plane and p-type in a (111)A plane. The resulting p-n junctions, heterostructure, and geometry provide the current and the optical confinement for the semiconductor laser.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.