Infra-red detector
US4786335A · kind A · utility
11Cited by
0References
11Claims
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Assignee
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Key dates
| Filing date | Oct 19, 1984 |
| Grant date | Nov 22, 1988 |
| Priority date | — |
| Expiry date | Oct 19, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/14
Abstract
A novel multilayer photoconductive I.R. detector is formed by incorporating alternate p and n-type layers, such that many layers occupy the detector thickness. The detector may be considered as a n-type photoconductor containing buried isolated p-type regions which give rise to internal electric fields the effect of which is to enhance minority carrier lifetime and inhibit motion of minority carriers towards surfaces.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.