Method for manufacturing a semiconductor device free from current leakage through a semiconductor layer
US4786607A · kind A · utility
33Cited by
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6Claims
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Key dates
| Filing date | Sep 4, 1987 |
| Grant date | Nov 22, 1988 |
| Priority date | — |
| Expiry date | Sep 4, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S136/29
Abstract
An improved semiconductor device is disclosed which is free from current leakage due to pin-holes or other gaps. Also an improved method for processsing a semiconductor device is shown. According to the invention, gaps produced in fabricating process of the semiconductor layer are filled with insulator in advance of deposition of electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.