Quantum well semiconductor laser device
US4787089A · kind A · utility
13Cited by
2References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 9, 1987 |
| Grant date | Nov 22, 1988 |
| Priority date | — |
| Expiry date | Feb 9, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3432
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser device comprising a single or a plurality of quantum well regions formed by a superlatticed structure which is composed of alternate layers consisting of thin GaAs layers and thin Al.sub.x Ga.sub.1-x As (0<x<1) layers, each of said layers having a thickness of five molecular layers or less and each of said quantum well regions having a thickness in the range of 100 .ANG. to 150 .ANG..
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.