Photoresist composition comprising an interpolymer of a silicon-containing monomer and an hydroxystyrene
US4788127A · kind A · utility
18Cited by
7References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 17, 1986 |
| Grant date | Nov 29, 1988 |
| Priority date | — |
| Expiry date | Nov 17, 2006 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0758
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photoresist composition comprises a photosensitive compound and an interpolymer of a silicon-containing monomer and an hydroxystyrene. The resist composition exhibits superior thermal stability and dissolution rate and good resistance to an oxygen plasma etch.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.