Subchannel doping to reduce short-gate effects in field effect transistors
US4788156A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 24, 1986 |
| Grant date | Nov 29, 1988 |
| Priority date | — |
| Expiry date | Sep 24, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/357
Abstract
One embodiment of a process in accordance with our invention includes the step of forming a P type region on a semiconductor substrate. After the P type region is formed, an N type layer is epitaxially grown on the P type region. A Schottky gate is then formed on the N type epitaxial layer. A first portion of the epitaxial layer serves as a transistor source, a second portion of the epitaxial layer serves as the transistor drain, and a third portion of the epitaxial layer serves as the channel. Of importance, the P type semiconductor region helps prevent various short channel effects caused when current carriers flowing between the source and drain flow too far from the Schottky gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.