RF transistor package with capacitor
US4788584A · kind A · utility
13Cited by
3References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 2, 1988 |
| Grant date | Nov 29, 1988 |
| Priority date | — |
| Expiry date | Mar 2, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device comprising a conductive layer; an insulting layer mounted on the conductive layer and having an opening; terminals deposited on the insulating layer; an active semiconductor element mounted on the conductive layer or the insulating layer, and; a capacitor mounted on the conductive layer. In this device, a path between the semiconductor element and the capacitor is very short and the conductive layer serves as a heat sink.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.