Heterostructure laser
US4788688A · kind A · utility
7Cited by
1References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 20, 1986 |
| Grant date | Nov 29, 1988 |
| Priority date | — |
| Expiry date | Jun 20, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/32391
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser of the heterostructure type is grown on a p-type substrate and has a plurality of p-type active layers. In a preferred embodiment, the active layers are grown by liquid phase epitaxy from a single melt which is maintained just below its equilibrium temperature and is cooled very slowly during deposition. As a result, the active layers are substantially identical in composition and have a very low lattice mismatch. They emit light at characteristic wavelengths within 50 angstroms of each other, indicating that their modal gain envelopes coincide. This condition minimizes the threshold current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.