Method for selective surface treatment of semiconductor structures
US4789646A · kind A · utility
7Cited by
10References
21Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 20, 1987 |
| Grant date | Dec 6, 1988 |
| Priority date | — |
| Expiry date | Jul 20, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/308
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Surface features of a semiconductor structure above a predetermined level are exposed for selective treatment (e.g., etching) by forming a layer of a solvent-expanded polymer on the surface of the structure, and allowing the layer to dry and cure, thereby relaxing to the predetermined level, at which it protects the underlying structure during treatment. Subsequently, the protective layer is removed by rinsing in a solvent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.