Intermittent etching process
US4790903A · kind A · utility
25Cited by
3References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 18, 1988 |
| Grant date | Dec 13, 1988 |
| Priority date | — |
| Expiry date | Mar 18, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/95
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An intermittent etching process for forming efficiently by reactive ion etching (RIE), a minute recess, such as a groove having an opening width as small as about 0.1 .mu.m, with a large aspect ratio in layers of metals, semiconductors, etc. The process comprises alternating RIE steps of brief duration e.g. 30 seconds with vacuumizing for evacuating gaseous reaction products produced in the RIE step from the etched recess. The process is particularly suitable for formation of a bridging portion of Nb, etc. constituting Josephson devices, by making use of three layered resist technique.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.