Thin film platinum resistance thermometer with high temperature diffusion barrier
US4791398A · kind A · utility
19Cited by
11References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 13, 1986 |
| Grant date | Dec 13, 1988 |
| Priority date | — |
| Expiry date | Feb 13, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01C7/021
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A thin film platinum resistance thermometer capable of operation at elevated temperatures includes a benign dielectric layer covering the thin film platinum resistance temperature sensing element and a barrier layer overlying the dielectric layer. The barrier layer, which is preferrably titanium dioxide, resists diffusion of contaminants which would alter the electrical characteristics of the sensing element, while permitting diffusion of oxygen through the barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.