Method of producing ferroelectric thin film
US4792463A · kind A · utility
28Cited by
6References
7Claims
0Family size
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Key dates
| Filing date | Sep 3, 1986 |
| Grant date | Dec 20, 1988 |
| Priority date | — |
| Expiry date | Sep 3, 2006 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/409
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Method of producing a ferroelectric thin film by chemical vapor deposition, by providing a gaseous mixture containing oxygen and a gaseous raw material containing (A) alkyl lead and or alkyl bismuth together with an alcoholate of titanium, zirconium, silicon, germanium or niobium, (B) alkyl lead and alkyl germanium, or (C) alkyl bismuth and alkyl lead, and reacting the oxygen and gaseous raw material to oxidize the components of (A), (B) or (C), to form the thin film on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.