Electrophotographic element with silicide treated porous Al.sub.2 O.sub.3 sublayer
US4792510A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Dec 30, 1987 |
| Grant date | Dec 20, 1988 |
| Priority date | — |
| Expiry date | Dec 30, 2007 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03G5/08221
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
This invention relates to a photosensitive material for electrophotography having, on a substrate, an amorphous silicon layer comprising silicon atom as the matrix and containing at least one of hydrogen atom, halogen atom and heavy hydrogen atom, characterized by provided with a porous aluminum oxide layer between said substrate and said amorphous silicon layer. This invention further relates to a photosensitive material for electrophotography having, on a substrate, an amorphous silicon layer comprising silicon atom as the matrix and containing at least one of hydrogen atom, halogen atom and heavy hydrogen atom, characterized by provided with a porous aluminum oxide layer having the surface treated with a silicide material between said substrate and said amorphous silicon layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.