Methods for the preparation of thin large-area single crystals of diacetylenes and polydiacetylenes
US4793893A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 7, 1987 |
| Grant date | Dec 27, 1988 |
| Priority date | — |
| Expiry date | May 7, 2007 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/58
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for preparing thin large-area single crystals of diacetylene monomer represented by the formula: EQU R--C.tbd.C--C.tbd.C--R' wherein R and R' are side groups selected such that the diacetylene monomer is polymerizable by a 1,4-addition solid state reaction upon exposure to actinic radiation. The method involves forming a liquid layer containing pure diacetylene monomer between two opposed surfaces; applying pressure to the liquid layer disposed between the two opposed surfaces; and crystallizing the liquid layer disposed between the two opposed surfaces while by evaporation the liquid layer is kept under constant pressure to form a thin large-area single crystal of pure diacetylene monomer. A method for preparing thin large-area single crystals of polydiacetylene is also provided. The method further involves exposing a surface of a thin large-area single crystal of diacetylene monomer to ultraviolet or gamma radiation to form a thin large-area single crystal of polydiacetylene.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.