Semiconductor radiation detecting device
US4794438A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 16, 1987 |
| Grant date | Dec 27, 1988 |
| Priority date | — |
| Expiry date | Mar 16, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/295
- WIPO fieldEnvironmental technology
- WIPO sectorChemistry
Abstract
A semiconductor radiation detector having a body which includes a matrix of semiconductor material, specifically silicon, having an array of individual rods of conductive material, specifically TaSi.sub.2, disposed therein. The rods form Schottky barriers with the semiconductor material. A set of contacts spaced along the length of the body each make ohmic contact to several rods at one end of each rod, and an ohmic contact is made to the semiconductor material of the matrix. Incident radiation is directed at a surface of the body which lies parallel to the rods. Detectors connected to each of the contacts along the length of the body detect current flow generated in the vicinity of the rods associated with each contact member by radiation penetrating into the body to that depth.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.