Rear entry photodiode with three contacts

US4794439A · kind A · utility

Assignee

• General Electric Company · US

Inventors

• Paul P. Webb · Keyano, CA
• John Appert · Levittown, US
• Ronald E. Enstrom · Skillman, US

Key dates

• Filing date: Mar 19, 1987
• Grant date: Dec 27, 1988
• Expiry date: Mar 19, 2007

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/544

Abstract

A semiconductor photodiode includes a substrate of semi-insulating indium phosphide having a first layer of highly doped P type indium phosphide on a surface thereof. An active second layer of N type indium gallium arsenide is on the first layer and a third layer of N type indium gallium arsenide or indium phosphide is on the second layer. The third layer may be entirely more highly doped than the second layer or may have a highly doped region on its surface. A first contact is on the third layer and a second contact is on the first layer. A buffer layer of lightly doped N or P type indium phosphide may be provided between the first layer and the second layer.