Semiconductor memory device having a high capacitance storage capacitor
US4794563A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Oct 31, 1986 |
| Grant date | Dec 27, 1988 |
| Priority date | — |
| Expiry date | Oct 31, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/665
Abstract
This invention provides a semiconductor memory device for an integrated circuit comprising a semiconductor substrate of a first conductivity type, a field insulation layer on the semiconductor substrate, and a switch. This switch includes a gate insulation layer, a gate electrode on the gate insulation layer, and a pair of impurity regions of a second conductivity type in the substrate adjacent to the gate electrode. The device also includes a capacitor including a first electrode connected to one impurity region, a second electrode connected to a predetermined voltage, insulation means for separating the first and second electrodes, and groove means extending into the substrate for increasing the capacitace area of the first electrode. A method for making the devices is also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.