Single crystal, heteroepitaxial, GaAlAs/CuInSe.sub.2 tandem solar cell and method of manufacture
US4795501A · kind A · utility
20Cited by
3References
54Claims
0Family size
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Inventor
Key dates
| Filing date | Jul 13, 1987 |
| Grant date | Jan 3, 1989 |
| Priority date | — |
| Expiry date | Jul 13, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
Solar cells having high efficiency and high specific power are prepared in an "upside-down" process by depositing a lattice mismatch transition zone of ZnS.sub.x Se.sub.x and Cd.sub.y Zn.sub.1-y S.sub.z Se.sub.1-z on a CLEFT, double-heterostructure, single crystal, Ga.sub.a Al.sub.1-a As/GaAs thin film followed by deposition of a CuInSe.sub.2 thin film on the transition zone.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.