Method for producing silicon-imide
US4795622A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 24, 1986 |
| Grant date | Jan 3, 1989 |
| Priority date | — |
| Expiry date | Apr 24, 2006 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01P2002/88
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A silicon halide, preferably SiCl.sub.4, is reacted with an excess of a base, e.g. a Lewis base or Bronsted base with steric hindrance group to produce an adduct. The adduct, which need not be separated, is treated with ammonia gas to produce the imide of silicon. A light organic solvent is used. The temperature used is -78.degree. C. to 100.degree. C. and the reaction is rapid. Byproduct ammonium halide is removed, and the imide is heated at 1000.degree. C. to 1600.degree. C. in an oven in an atmosphere containing nitrogen, to produce silicon nitride of good sintering characteristics and more than 70 wt % of which is of the .alpha.-crystal form.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.