Cluster ion plating method for producing electrically conductive carbon film
US4795656A · kind A · utility
19Cited by
2References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 14, 1988 |
| Grant date | Jan 3, 1989 |
| Priority date | — |
| Expiry date | Apr 14, 2008 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/0605
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A carbon film having a large electrical conductivity is produced at a comparatively low substrate temperature by a method comprising forming the carbon film from a hydrocarbon by an ion beam method and heating the substrate at a temperature of 400.degree. C. to 1,200.degree. C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.