Monocrystalline silicon layers on substrates
US4795679A · kind A · utility
32Cited by
12References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 23, 1987 |
| Grant date | Jan 3, 1989 |
| Priority date | — |
| Expiry date | Apr 23, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S428/901
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A capped recrystallizable silicon layer covering a substrate is provided with a thin buffer layer between the capping layer and the silicon layer. This recrystallizable silicon layer is then converted to a monocrystalline silicon layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.