Two-dimensional phase-locked surface emitting semiconductor laser array
US4796269A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 22, 1987 |
| Grant date | Jan 3, 1989 |
| Priority date | — |
| Expiry date | May 22, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/42
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A coherent, two-dimensional, phase-locked, surface emitting semiconductor laser array in a monolithic wafer is disclosed. Active regions of diode laser-striped semiconductor material are focused ion beam (FIB) micromachined to form transversely disposed channels of symmetric, opposed, generally parabolic, mirrored surfaces. Multiple diode laser pairs, emitting laser energy in a generally horizontal plane, are longitudinally injection-coupled (phase-locked) by semitransmissive, opposed regions that are micromachined into the otherwise reflective parabolic surfaces of each channel. Inherently, the striped material permits evanescent coupling, in an axis generally perpendicular to the longitudinal, injection-coupled axis. Thus, coupling is achieved in two dimensions across the extent of the array. High-power, coherent, laser energy is reflected thereby generally normally away from the surface of the monolithic structure. In a modification to the preferred embodiment, discrete electrodes on the top surface of the active region segments enable laser beam modulation or wavelength tuning of the coherent, surface emitting laser energy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.