Method for selective heteroepitaxial III-V compound growth
US4797374A · kind A · utility
13Cited by
8References
13Claims
0Family size
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Key dates
| Filing date | May 20, 1987 |
| Grant date | Jan 10, 1989 |
| Priority date | — |
| Expiry date | May 20, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/119
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of producing a heterostructure device comprises defining in a substrate 5 of group III-V semiconductor material a structure, such as a mesa 9, having first and second faces oriented substantially parallel to the (100) and (111)A crystallographic planes. The mesa 9 is exposed to group III-V chemical reagents thereby to deposit group III-V materials on the first and/or second faces in dependence upon the group V constituent in the chemical reagents.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.