Semiconductor light emitting device with vertical light emission
US4797890A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Dec 24, 1986 |
| Grant date | Jan 10, 1989 |
| Priority date | — |
| Expiry date | Dec 24, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/813
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor light emitting device, such as a light emitting diode or laser, includes a substrate which is provided with a hole and a pn junction extending adjacent to and in parallel with the side wall of the hole. Thus, the side wall of the hole extends in a direction perpendicular to a main surface of the substrate. A pair of electrodes is provided such that current flows across the pn junction so that light emitted in a vertical direction which is perpendicular to the main surface of the substrate. The hole may be either a through hole or a bore hole. With the additional provision of a pair of resonators, there is provided a semiconductor laser.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.